A4G04QC6BNTDSO

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Description: SO-DIMM DDR4 4GB SAMSUNG IC 生产商: ATP 产品描述代码: A4G04QC6BNTDSO Rutronik No.: DISMOD1976 包装单位: 1 最低订购量: 1 包装: TRAY

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参数

容量: 4GB
最高温: 95°C
布局: SO-DIMM
最低温: 0°C
时钟频率: 2666 MHZ
ECC: NO
电压: 1.2
引脚: 260
注册的: NO
P(tot): NO
RoHS Status: RoHS-conform
包装: TRAY

出口控制分类编号: EAR99
海关税号: 84733020000
国家或地区: Taiwan
ABC 编码: A
生产商交期: 6 周

描述

Rutronik Approved Compatibility (MemTest86)

Boards:

+ DISBOA3164 (Validated by Rutronik)

+ DISBOA3246 (Validated by Rutronik)

Please contact PM Richard Klauser for MemTest86 Pro Certificate.

ATP's fourth-generation industrial DDR memory combines up to 3200 MT/s data transfer rate and a mere 1.2V power consumption to deliver faster performance at higher power savings over earlier DRAM technologies.

As the evolutionary transition from DDR3, DDR4 supports features and functions that are well-suited for increasing bandwidth capabilities to support the growth of online traffic.

DDR4-3200 MT/s is the newest generation of fast, performance-oriented DRAM modules optimized for the latest Intel® Xeon® Platinum, Gold, Silver and Bronze Scalable processors and 8th-generation Intel® Core™ i7/i5/i3 processors. The increased interface speed from 2400 MT/s to 3200 MT/s amplifies theoretical peak performance by 20% and gives a boost to the most critical computing applications in industries such as telecommunication infrastructures, networking storage systems, network-attached storage (NAS) servers, micro/cloud servers, and embedded systems like industrial PCs.

Features:

Density: 2 GB to 128 GB
Increased performance and bandwidth (up to 3200 MT/s)
Decreased voltage for better power consumption
Provides better reliability, availability and serviceability (RAS) and improves data integrity