DGD2190MS8-13
图片仅供参考
数据手册- Inom(min)
- Driver
- 通道
- 2
- V(op,max)
- 600 V
- I(lim,min)/Ch
- 4.5 A
- 安装
- SMD
- Diagnostics
- NO
- T(j)最大
- 150 °C
- t 开
- 0.140 µS
- t 关
- 0.140 µS
- 技术
- CMOS
- P(tot)
- NO
- 封装
- SO-8
- RoHS Status
- RoHS-conform
- 包装
- REEL
- 出口控制分类编号
- EAR99
- 海关税号
- 85423990000
- 国家或地区
- China
- ABC 编码
- B
- 生产商交期
- 10 周
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8
The DGD2190M is a high voltage/high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half bridge configuration. High voltage processing techniques enable the DGD2190M’s high-side to switch to 600V in a bootstrap operation under high dV/dt conditions.
The DGD2190M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction.
The DGD2190M is offered in the SO-8 (Type TH) package and operates over an extended -40°C to +125°C temperature range.
- DC-DC Converters
- DC-AC Inverters
- AC-DC Power Supplies
- Motor Controls
- Class D Power Amplifiers
- Floating High-Side Driver in Bootstrap Operation to 600V
- Drives Two N-Channel MOSFETs or IGBTs in a Half-Bridge Configuation
- Output Drivers Capable of 4.5A/4.5A Typ Sink/Source
- Logic Input (HIN and LIN) 3.3V Capability
- Schmitt Triggered Logic Inputs with Internal Pull-Down
- Undervoltage Lockout for High and Low-Side Drivers
- Extended Temperature Range: -40°C to +125°C
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