1EDN7550BXTSA1
图片仅供参考
数据手册- Inom(max)
- Driver
- 通道
- 1
- T(j)最小
- -40 °C
- T(j)最大
- 150 °C
- V(in) 最大
- 4,5 V
- V(in) 最大
- 20 V
- OL Detection
- YES
- P(tot)
- NO
- 封装
- SOT-23
- RoHS Status
- RoHS-conform
- 包装
- REEL
- 生产商产品料号
- SP001690382
- 出口控制分类编号
- EAR99
- 海关税号
- 85423990000
- 国家或地区
- China
- ABC 编码
- B
- 生产商交期
- 15 周
1-channel non-isolated gate-driver IC family with truly differential Inputs
The 1EDN7550B is a non-isolated gate-driver IC and available in a small SOT-23 package. It has truly differential inputs enabling cost-effective solutions with exceptional power density in:
• Boost-PFC with Kelvin-source MOSFETs
• Synchronous rectification stages
• Designs with long distance between control IC and gate-driver IC
• Buck-boost converters
• Low- and medium-voltage half-bridges
• High density 48V to 12V intermediate bus converter
Summary of Features
• Truly differential inputs for configurable common mode robustness
• 4A source current
• 8A sink current
• Separate source/sink outputs
• Low-ohmic output stage
• 29ns input minimum pulse width
• -7 ns/+10 ns propagation delay accuracy
• 5A reverse current robustness of the outputs
• 4V UVLO version
• TSNP-6 package
Benefits
• Robust
• Small
• PCB layout flexibility
• High power density
• Short time to market
Potential applications
• Boost-PFCs with Kelvin-source MOSFETs
• Interleaved PFC
• Full-bridge synchronous rectification stages
• 48V to 12V intermediate bus converters
• Buck-boost converters
• Low- and medium-voltage half-bridges
Application benefits
• Robust against ground shifts from power MOSFET switching
• Low MOSFET switching losses
• Robust against false MOSFET triggering
• Highest effective MOSFET driving power
• Efficiency gains
• Increased power density and BOM savings
• Instant MOSFET protection under abnormal operation
• High power density
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