2ED21844S06JXUMA1
图片仅供参考
Description:
Half-B.GateDrv 650V 2.5A DSO-14
生产商:
INFINEON
产品描述代码:
2ED21844S06J
Rutronik No.:
ICGDRV1303
包装单位:
2500
最低订购量:
2500
封装:
DSO-14
包装:
REEL
数据手册- 通道
- 2
- 安装
- SMD
- Diagnostics
- YES
- T(j)最大
- 150 °C
- I(lim,max)/Ch
- 2.5 A
- V(in) 最大
- 10 V
- V(in) 最大
- 20 V
- t 开
- 0.2 µS
- t 关
- 0.2 µS
- OL探测
- NO
- P(tot)
- NO
- 封装
- DSO-14
- RoHS Status
- RoHS-conform
- 包装
- REEL
- 生产商产品料号
- SP001710048
- 出口控制分类编号
- EAR99
- 海关税号
- 85423990000
- 国家或地区
- Malaysia
- ABC 编码
- B
- 生产商交期
- 41 周
650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode and shutdown in DSO-14 package
650 V half-bridge high current, and high speed gate driver for MOSFETand IGBT, with typical 2.5 A sink and source current in DSO-14 package. The smaller DSO-8 package version is also available: 2ED2184S06F.
Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
Summary of Features
- Operating voltages (VS node) upto + 650 V
- Negative VS transient immunity of 100 V
- Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
- High and Low Voltage Pins Separated for Maximum Creepage and Clearance
- Separate logic and power ground
- Floating channel designed for bootstrap operation
- Integrated shoot-through protection with built-in dead time (programmable deadtime)
- Maximum supply voltage of 25 V
- Independent under voltage lockout (UVLO) for both channels
- 200 ns propagation delay
- IN, /SD input logic, Shutdown input turns off both channels
- Logic Operational up to –11 V on VS Pin
- Negative Voltage Tolerance On Inputs of –5 V
- The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration
Benefits
- High current gate driver - suitable for high current power device, and high frequency application
- Integrated bootstrap diode (BSD) - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design
- 50% lower level-shift losses
- Excellent ruggedness and noise immunity against negative transient voltages (-100 V) on VS pin
Applications
- Fast EV charging
- Home appliances
- Motor control and drives
- Power Management (SMPS) - Reference Design
- Power tools
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