2ED2388S06FXUMA1
新产品
图片仅供参考
Description:
HS-LS-Gate Drv 650V 0.29A DSO-8
生产商:
INFINEON
产品描述代码:
2ED2388S06F
Rutronik No.:
ICGDRV1583
包装单位:
2500
最低订购量:
2500
封装:
DSO-8
包装:
REEL
数据手册- 通道
- 2
- V(op,min)
- 10 V
- V(op,max)
- 20 V
- I(lim,min)/Ch
- 0.29 A
- T(j)最小
- -40 °C
- T(j)最大
- 105 °C
- V(in) 最大
- -1 V
- V(in) 最大
- 25 V
- t 开
- 0.09 µS
- t 关
- 0.09 µS
- P(tot)
- NO
- 封装
- DSO-8
- RoHS Status
- RoHS-conform
- 包装
- REEL
- 生产商产品料号
- SP005571188
- 出口控制分类编号
- EAR99
- 海关税号
- 85423990000
- 国家或地区
- Thailand
- 生产商交期
- 41 周
650 V high speed, half-bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFETs and IGBTs
Based on our SOI-technology, the 2ED2388S06F has excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.
Summary of Features
- Operating voltages (VS node) up to + 650 V
- Negative VS transient immunity of 100 V
- Integrated ultra-fast, low resistance bootstrap diode
- 90 ns propagation delay
- HIN, LIN logic input
- Floating channel designed for bootstrap operation
- Independent under voltage lockout (UVLO) for both channels
- Logic operational up to –11 V on VS Pin
- Negative voltage tolerance on inputs of –5 V
- Maximum supply voltage of 25 V
- 3.3 V, 5 V and 15 V input logic compatible
Benefits
- Integrated bootstrap diode - space savings, reduced BOM cost, smaller PCB at lower cost with simpler design
- 50% lower level-shift losses
- Excellent ruggedness and noise immunity against negative transient voltages on VS pin
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