AIGB50N65H5ATMA1

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Description: IGBT 650V 50A AECQ D2PAK SMD 生产商: INFINEON 产品描述代码: AIGB50N65H5 Rutronik No.: IGBT2862 包装单位: 1000 最低订购量: 1000 封装: TO263-3 包装: REEL

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参数

V(CE): 650 V
I(C): 80 A
V(CEsat): 1.65 V
封装: TO263-3
Q(g): NO
P(tot): 305 W
P(tot): AEC-Q(101)
t(r): 18 nS
td(off): 163 nS
td(开): 22 nS
安装: SMD
RoHS Status: RoHS-conform
技术: TRENCHST.5
包装: REEL

生产商产品料号: SP001686024
出口控制分类编号: EAR99
海关税号: 85412900000
国家或地区: Malaysia
ABC 编码: A
生产商交期: 28 周

描述

World-class low-cost power for fast-switching applications in small SMD packages

Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC.

TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only.

Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-3), even further decreases IGBT solution costs by reducing cost on system and manufacturing level. This comes with the benefit of increased quality control due to automated processes.

Summary of Features

TRENCHSTOP™ 5 technology with low VCEsat, optimized as H5 variant (High Speed Variant) with softer switching behavior for easier design-in
650V break-down voltage, 50A nominal current
Very fast switching (up to 150kHz)
Automotive qualified in accordance to Infineon quality standards
Max junction temperature 175 °C
Highest efficiency
- very low conduction losses
- very low switching losses
Very low junction and case temperature
SMD D2PAK package for low assembly costs and higher power density
Extremely robust

Potential Applications