AIKW50N65RF5XKSA1

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Description: IGBT 650V 50A+CoolSiC D.TO247-3 生产商: INFINEON 产品描述代码: AIKW50N65RF5 Rutronik No.: IGBT2951 包装单位: 240 最低订购量: 240 封装: TO-247 包装: TUBE

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参数

V(CE): 650 V
I(C): 50 A
V(CEsat): 1.6 V
封装: TO-247
Q(g): YES
P(tot): 250 W
P(tot): AEC-Q(101)
t(r): 13 nS
td(off): 156 nS
td(开): 20 nS
安装: THT
RoHS Status: RoHS-conform
技术: TRENCH
包装: TUBE

生产商产品料号: SP001724852
出口控制分类编号: EAR99
海关税号: 85412900000
国家或地区: China
ABC 编码: A
生产商交期: 41 周

描述

Hybrid Power Discrete with SiC power technology in THD package for e-Mobility applications

Best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. Therefore, Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO fast-switching IGBT and CoolSiC™ Schottky Diode to enable a cost-efficient performance boost for fast switching automotive applications such as On-Board Charger, PFC, DC-DC and DC-AC.
The combination of a best-in-class fast-switching IGBT with a very reliable SiC Diode builds a perfect cost-performance trade-off for hard-switching topologies. Due to the Qrr-free unipolar CoolSiC™ Schottky Diode, the Eon of the IGBT will be reduced significantly over silicon-only solutions. This makes the hybrid the first-choice for system-cost-sensitive hard commutation applications, such as Totem Pole topology in Automotive On-Board Charger applications. This results in better margin for low-complexity design-in activities.

Summary of Features