BGA7L1BN6E6327XTSA1
图片仅供参考
Description:
SiGe Low noise amplifier LTE
生产商:
INFINEON
产品描述代码:
BGA7L1BN6 E6327
Rutronik No.:
THF5316
包装单位:
15000
最低订购量:
15000
封装:
TSNP-6-2
包装:
REEL
数据手册- Channels
- 5
- P(tot)
- NO
- 封装
- TSNP-6-2
- RoHS Status
- RoHS-conform
- 包装
- REEL
- 生产商产品料号
- SP001402782
- 出口控制分类编号
- EAR99
- 海关税号
- 85423390000
- 国家或地区
- Malaysia
- ABC 编码
- B
- 生产商交期
- 10 周
BGA7L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 716 MHzto 960 MHz and operates from1.5 V to 3.3 V supply voltage.The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering down Vcc.
Summary of Features:
- Insertion power gain: 13.6 dB
- Low noise figure: 0.75 dB
- Low current consumption: 4.9 mA
- Insertion loss in bypass mode: -2.2 dB
- Operating frequencies: 716 - 960 MHz
- Two-state control: Bypass- and high gain-mode
- Supply voltage: 1.5 V to 3.6 V
- Digital on/off switch (1V logic high level)
- Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
- B7HF Silicon Germanium technology
- RF output internally matched to 50 Ω
- Only 1 external SMD component necessary
- Pb-free (RoHS compliant) package
LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules.
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