BGA7L1N6E6327XTSA1
图片仅供参考
Description:
SiGe Low noise amplifier LTE
生产商:
INFINEON
产品描述代码:
BGA7L1N6 E6327
Rutronik No.:
THF5266
包装单位:
15000
最低订购量:
15000
封装:
TSNP-6-2
包装:
REEL
数据手册- P(tot)
- NO
- 封装
- TSNP-6-2
- RoHS Status
- RoHS-conform
- 包装
- REEL
- 生产商产品料号
- SP001109134
- 出口控制分类编号
- EAR99
- 海关税号
- 85423390000
- 国家或地区
- Malaysia
- 生产商交期
- 100 周
Silicon Germanium Low Noise Amplifier for LTE
Summary of Features:
- Insertion power gain: 13.3 dB
- Low noise figure: 0.90 dB
- Low current consumption: 4.4 mA
- Operating frequencies: 728 - 960 MHz
- Supply voltage: 1.5 V to 3.3 V
- Digital on/off switch (1V logic high level)
- Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
- B7HF Silicon Germanium technology
- RF output internally matched to 50 Ω
- Only 1 external SMD component necessary
- 2kV HBM ESD protection (including AI-pin)
- Pb-free (RoHS compliant) package
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