BGA9V1MN9E6327XTSA1
图片仅供参考
数据手册- Frequency f
- 3800 MHz
- 封装
- TSNP-9
- P(tot)
- NO
- RoHS Status
- RoHS-conform
- 包装
- REEL
- 生产商产品料号
- SP002367704
- 出口控制分类编号
- EAR99
- 海关税号
- 85423990000
- 国家或地区
- Malaysia
- ABC 编码
- B
- 生产商交期
- 10 周
The BGA9V1MN9 is a low noise amplifier for LTE and 5G which covers a wide frequency range from 3.3 GHz to 4.2 GHz. The LNA provides up to 21.0 dB gain and 0.75 dB noise figure at a current consumption of 5.8 mA in the application configuration described in Chapter 7. With the Gain Step feature the gain and linearity can be adjusted to increase the system dynamic range and to accommodate to changing interference scenarios.
The BGA9V1MN9 supports ultra-low bypass current of 2 µA and 1.2 V operating voltage to reduce power consumption. It operates from 1.1 V to 2.0 V supply voltage over temperature. The compact9 pin TSNP-9 package with the dimension of 1.1 x 1.1 mm helps to save space on the PCB.
Summary of Features
- Power gain: 21.0 dB
- Low noise figure: 0.75 dB
- Low current consumption: 5.8 mA
- Frequency range from 3.3 to 4.2 GHz
- Supply voltage: 1.1 to 2.0 V
- Integrated MIPI RFFE interface operating in 1.65 to 1.95 V voltage range
- Software programmable MIPI RFFE USID
- USID select pin
- Small form factor 1.1 mm x 1.1 mm
- High EMI robustness
- RoHS and WEEE compliant package
Potential Applications
LTE / 5G Smartphones
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