BGS12PL6E6327XTSA1

The BGS12PL6 general purpose RF MOS power switch is designed to cover a broad range of high power applications from 30 MHz to 4 GHz, mainly in the transmit path of GSM, WCDMA and LTE mobile phones. The symmetric design of its single pole double throw configuration, as shown in Figure 1 (see datasheet) offers high design flexibility. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level of 35 dBm, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.36 dB in the 1 GHz, 0.46 dB in the 2 GHz and 0.6 dB in the 3 GHz range.

The BGS12PL6 RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness.

The device has a very small size of only 0.7x 1.1mm 2 and a low height of 0.31mm. No decoupling capacitors are required in typical applications as long as no DC is applied to any RF port.

Evaluation Board: BGS12PL6 BOARD

Summary of Features: