数据手册- Configuration
- N-CH
- V(DS)
- 150 V
- I(D)at Tc=25°C
- 87 A
- RDS(on)at 10V
- 9.3 mOhm
- Q(g)
- 58 nC
- P(tot)
- 139 W
- R(thJC)
- 0.54 K/W
- Logic level
- NO
- Mounting
- SMD
- Technology
- OptiMOS
- Fast bodydiode
- NO
- P(tot)
- NO
- 封装
- SuperSO8
- RoHS Status
- RoHS-conform
- 包装
- REEL
- 生产商产品料号
- SP001279590
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- China
- ABC 编码
- A
- 生产商交期
- 28 周
The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.
Summary of Features
- Lower R DS(on) without compromising FOM gd and FOM oss
- Lower output charge
- Ultra-low reverse recovery charge
- Increased commutation ruggedness
- Higher switching frequency possible
Benefits
- Reduced paralleling
- Size reduction enabled with SuperSO8 best-in-class
- Higher power density designs
- More rugged products
- System cost reduction
- Improved EMI behavior
Target Applications
- Low voltage drives
- Telecom
- Solar
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