数据手册- V(CE)
- 1200 V
- I(C)
- 150 A
- td(on)
- 300 ns
- td(off)
- 790 ns
- P(tot)
- 150 W
- t(r)
- NO ns
- V(CEsat)
- SMD V
- Bodydiode
- NO
- Mounting
- SMD
- P(tot)
- NO
- 封装
- 34mm
- RoHS Status
- RoHS-conform
- 包装
- BOX
- 生产商产品料号
- SP000624908
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- Slovakia
- ABC 编码
- A
- 生产商交期
- 22 周
1200 V, 150 A dual IGBT module
34 mm 1200 V, 150 A dual IGBT module with fast TRENCHSTOP™ IGBT4 and optimized Emitter Controlled diode.
Summary of Features
- Extended operation temperature Tvj op
- Low switching losses
- Low VCEsat
- Tvj op = 150°C
- VCEsat with positive temperature coefficient
- Isolated base plate
- Standard housing
Benefits
- Flexibility
- Optimal electrical performance
- Highest reliability
Applications
- Industrial heating and welding
- Solutions for solar energy systems
- Uninterruptible Power Supply (UPS)
34 mm 1200 V, 150 A dual IGBT module with fast TRENCHSTOP™ IGBT4 and optimized Emitter Controlled diode.
Summary of Features
- Extended operation temperature Tvj op
- Low switching losses
- Low VCEsat
- Tvj op = 150°C
- VCEsat with positive temperature coefficient
- Isolated base plate
- Standard housing
Benefits
- Flexibility
- Optimal electrical performance
- Highest reliability
Applications
- Industrial heating and welding
- Solutions for solar energy systems
- Uninterruptible Power Supply (UPS)
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