- V(CE)
- 1200 V
- I(C)
- 400 A
- td(on)
- 800 ns
- td(off)
- 2000 ns
- P(tot)
- 125 W
- t(r)
- NO ns
- V(CEsat)
- SMD V
- Bodydiode
- IGBT3
- P(tot)
- NO
- 封装
- 62mm
- RoHS Status
- RoHS-conform
- 包装
- BOX
- 生产商产品料号
- SP000100791
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- Hungary
- ABC 编码
- A
- 生产商交期
- 16 周
1200 V, 400 A dual IGBT module
The half-bridge 62 mm 1200 V, 400 A dual IGBT modules with fast TRENCHSTOP™ IGBT3 and Emitter Controlled high efficiency diode is the right choice for your design.
Also available as variation with Common Emitter: FF400R12KT3_E
Summary of Features
- Superior solution for frequency controlled inverter drives
- UL/CSA Certification with UL1557 E83336
- Operating temperature up to 125°C (max 150°C)
- Optimized switching characteristic like softness and reduced switching losses
- Existing packages with higher current capability
- RoHS compliant
Benefits
- Flexibility
- Optimal electrical performance
- Highest reliability
Potential Applications
- Motor control and drives
- Solutions for solar energy systems
- Uninterruptible power supply (UPS)
- Commercial, construction and agricultural vehicles (CAV)
- Industrial heating and welding
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