- V(CE)
- 3300 V
- I(C)
- 450 A
- td(on)
- 900 ns
- td(off)
- 1000000 ns
- P(tot)
- 150 W
- t(r)
- NO ns
- V(CEsat)
- THT V
- Bodydiode
- IGBT3
- P(tot)
- NO
- 封装
- XHP100-6
- RoHS Status
- RoHS-conform
- 包装
- BOX
- 生产商产品料号
- SP001779550
- 出口控制分类编号
- EAR99
- 海关税号
- 85044095900
- 国家或地区
- Slovakia
- 生产商交期
- 54 周
3300 V dual IGBT module:
XHP™ 3 3300 V, 450 A dual IGBT module with TRENCHSTOPTM IGBT3, emitter controlled diode and with enhanced isolation of 10.4 kV
- High DC stability
- High short-circuit capability
- Low switching losses
- Low VCEsat
- Unbeatable robustness
- Tvj op=150°C
- VCEsat with positive temperature coefficient
- AlSiC base plate for increased thermal cycling capability
- Package with CTI > 600
- Isolated base plate
- One, high-power platform offering flexibility and scalability
- High power density and optimized frame sizes
- High reliability and long service life
- Reduced system cost
- Low inductance
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