FS1150R08A8P3LBCHPSA1
新产品
图片仅供参考
Description:
IGBT 750V 1150A HybridPACK3
生产商:
INFINEON
产品描述代码:
FS1150R08A8P3LBC
Rutronik No.:
POWMOD1412
包装单位:
6
最低订购量:
96
封装:
AG-HDG2XT-
包装:
TRAY
数据手册- V(CE)
- 750 V
- I(C)
- 1150 A
- td(on)
- 222 ns
- td(off)
- 929 ns
- P(tot)
- 1000 W
- t(r)
- 50 ns
- V(CEsat)
- 1.08 V
- Bodydiode
- YES
- Mounting
- PRESSFIT
- P(tot)
- AECQ100-D
- 封装
- AG-HDG2XT-
- RoHS Status
- RoHS-conform
- 包装
- TRAY
- 生产商产品料号
- SP005724696
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- Germany
- 生产商交期
- 54 周
The power module implements Infineon’s next generation chip technology EDT3 (Si IGBT) 750V, optimized for electric drive train applications, from mid- to high-range automotive power classes.
Summary of Features
- VCES = 750 V
- ICN = 1150 A / ICRM = 2300 A
- Blocking voltage 750 V
- Low VCE,sat
- Low switching losses
- Low Qg and Crss
- Low inductive design
- 4.2 kV DC 1 second insulation
- High creepage and clearance distances
- Direct-cooled PinFin base plate
- PCB and cooler assembly guidelines
- PressFIT contact technology
Benefits
- Higher temperature cycling capability
- Integrated diode temperature sensors
- New plastic material
- Better temperature capability
- New frame design
- Lower system BOM
- Lower AC contact resistance
- Lower tab temperature
- PressFIT Contact Technology
- RoHS compliant
- Completely Pb free
- Superior reliability
Potential Applications
- Automotive applications
- (Hybrid) electrical vehicles (H)EV
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