数据手册- V(CE)
- 1700 V
- I(C)
- 1200 A
- td(on)
- 2400 ns
- td(off)
- 7800 ns
- P(tot)
- 150 W
- t(r)
- NO ns
- V(CEsat)
- SMD V
- Bodydiode
- IGBT4
- P(tot)
- NO
- 封装
- IHMB130-1
- RoHS Status
- RoHS-conform
- 包装
- TRAY
- 生产商产品料号
- SP001052006
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- Germany
- ABC 编码
- A
- 生产商交期
- 44 周
1700 V IHM B 130 mm single switch IGBT Module with soft-switching Trench-IGBT 4, AlSiC base-plate and enlarged diode - The best solution for your traction and industry applications.
Summary of Features
- Extended Operation Temperature Tvj op
- Enlarged Diode for regenerative operation
- Low VCEsat
- 4 kV AC 1min Insulation
- AlSiC Base Plate for increasing Thermal Cycling Capability
- Package with CTI > 400
- High Creepage and Clearance Distances
- High Power and Thermal Cycling Capability
Benefits
- High Power Density
- Standardized housing
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