数据手册- V(RRM)
- 600 V
- I(F)per diode
- 5 A
- I(FSM)
- 18 A
- V(F)
- 2.8 V
- Technology
- 3thinQ!SiC
- P(tot)
- NO
- 封装
- DPAK
- RoHS Status
- RoHS-conform
- 包装
- REEL
- Configuration
- SINGLE
- Mounting
- SMD
- T(j) max
- 175 °C
- 生产商产品料号
- SP001633162
- 出口控制分类编号
- EAR99
- 海关税号
- 85411000000
- 国家或地区
- Malaysia
- ABC 编码
- A
- 生产商交期
- 41 周
The third generation of Infineon SiC Schottky diodes features the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.
Summary of Features
- Benchmark switching behavior
- No reverse recovery charge
- Temperature independent switching behavior
- High operating temperature (T j max 175°C)
Benefits
- System efficiency improvement compared to Si diodes
- Reduced cooling requirements
- Enabling higher frequency/increased power density
- Higher system reliability due to lower operating temperature
- Reduced EMI
Target Applications
- Server
- Telecom
- Solar
- Lighting
- PC power
- AC-DC
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