数据手册- V(RRM)
- 650 V
- I(F)per diode
- 12 A
- I(FSM)
- 51 A
- V(F)
- 1.25 V
- Technology
- D1265C6
- P(tot)
- NO
- 封装
- DPAK
- RoHS Status
- RoHS-conform
- 包装
- REEL
- Configuration
- SINGLE
- Mounting
- SMT
- T(j) max
- 175 °C
- 生产商产品料号
- SP001679792
- 出口控制分类编号
- EAR99
- 海关税号
- 85411000000
- 国家或地区
- Malaysia
- ABC 编码
- A
- 生产商交期
- 19 周
Description:
Summary of Features
- Offers best-in-class VF and FOM Qc x VF
- Improved dv/dt ruggedness
- Easy and effective match with CoolMOS™ 7 SJ MOSFET families
- Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
- Reduced parasitic source inductance improves e iciency and ease-of-use
- Enables higher power density solutions
- Exceeding the highest quality standards
Benefits
- Enabling highest energy efficiency
- Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
- Reduced parasitic source inductance improves e iciency and ease-of-use
- Enables higher power density solutions
- Exceeding the highest quality standards
Target Applications
- Target Applications:
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