数据手册- V(RRM)
- 650 V
- I(F)per diode
- 16 A
- I(FSM)
- 124 A
- V(F)
- 1.5 V
- Technology
- 5thinQ!SiC
- P(tot)
- NO
- 封装
- TO220-2
- RoHS Status
- RoHS-conform
- 包装
- TUBE
- Configuration
- SINGLE
- Mounting
- THT
- T(j) max
- 150 °C
- 生产商产品料号
- SP001632392
- 出口控制分类编号
- EAR99
- 海关税号
- 85411000000
- 国家或地区
- Malaysia
- ABC 编码
- A
- 生产商交期
- 19 周
CoolSiC™ generation 5 represents Infineon’s leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).
Summary of Features
- V br at 650V
- Improved figure of merit (Q c x V f)
- No reverse recovery charge
- Soft switching reverse recovery waveform
- Temperature independent switching behavior
- High operating temperature (T j max 175°C)
- Improved surge capability
- Pb-free lead plating
Benefits
- Higher safety margin against overvoltage and complements CoolMOS™ offer
- Improved efficiency over all load conditions
- Increased efficiency compared to Silicon Diode alternatives
- Reduced EMI compared to snappier Silicon diode reverse recovery waveform
- Highly stable switching performance
- Reduced cooling requirements
- Reduced risks of thermal runaway
- RoHS compliant
- Very high quality and high volume manufacturing capability
Target Applications
- Telecom/server SMPS
- Solar
- UPS
- PC power
- LED/LCD TV
- Motor drives
- HID lighting
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