IDL12G65C5XUMA2

CoolSiC™ generation 5 represents Infineon’s leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).

Summary of Features

• V br at 650V
• Improved figure of merit (Q c x V f)
• No reverse recovery charge
• Soft switching reverse recovery waveform
• Temperature independent switching behavior
• High operating temperature (T j max 175°C)
• Improved surge capability
• Pb-free lead plating

Benefits

• Higher safety margin against overvoltage and complements CoolMOS™ offer
• Improved efficiency over all load conditions
• Increased efficiency compared to Silicon Diode alternatives
• Reduced EMI compared to snappier Silicon diode reverse recovery waveform
• Highly stable switching performance
• Reduced cooling requirements
• Reduced risks of thermal runaway
• RoHS compliant
• Very high quality and high volume manufacturing capability

Target Applications

• Telecom/server SMPS
• Solar
• UPS
• PC power
• LED/LCD TV
• Motor drives
• HID lighting