数据手册- V(RRM)
- 650 V
- I(F)per diode
- 10 A
- I(FSM)
- 58 A
- V(F)
- 1.7 V
- Technology
- 5thinQ!SiC
- P(tot)
- NO
- 封装
- TO247-3
- RoHS Status
- RoHS-conform
- 包装
- TUBE
- Configuration
- CommonCath
- Mounting
- THT
- T(j) max
- 175 °C
- 生产商产品料号
- SP001633188
- 出口控制分类编号
- EAR99
- 海关税号
- 85411000000
- 国家或地区
- China
- ABC 编码
- A
- 生产商交期
- 19 周
CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f).The new CoolSiC™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
Summary of Features
- V br at 650V
- Improved figure of merit (Q c x V f)
- No reverse recovery charge
- Soft switching reverse recovery waveform
- Temperature independent switching behavior
- High operating temperature (T j max 175°C)
- Improved surge capability
- Pb-free lead plating
Benefits
- Higher safety margin against overvoltage and complements CoolMOS™ offer
- Improved efficiency over all load conditions
- Increased efficiency compared to Silicon Diode alternatives
- Reduced EMI compared to snappier Silicon diode reverse recovery waveform
- Highly stable switching performance
- Reduced cooling requirements
- Reduced risks of thermal runaway
- RoHS compliant
- Very high quality and high volume manufacturing capability
Target Applications
- Solar
- Uninterruptible power supply (UPS)
- Motor control and drives |delimiter|
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