数据手册- V(RRM)
- 1200 V
- I(F)per diode
- 15 A
- I(FSM)
- 115 A
- V(F)
- 1.4 V
- Technology
- 5thinQ!SiC
- P(tot)
- NO
- 封装
- TO247-3
- RoHS Status
- RoHS-conform
- 包装
- TUBE
- Configuration
- CommonCath
- Mounting
- THT
- T(j) max
- 175 °C
- 生产商产品料号
- SP001123716
- 出口控制分类编号
- EAR99
- 海关税号
- 85411000000
- 国家或地区
- China
- ABC 编码
- A
- 生产商交期
- 14 周
The CoolSiC™ Schottky diode generation 5 1200 V, 30 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Summary of Features
- Best-in-class forward voltage (VF)
- No reverse recovery charge
- Mild positive temperature dependency of VF
- Best-in-class surge current capability
- Excellent thermal performance
Benefits
- Highest system efficiency
- Improved system efficiency at low switching frequencies
- Increased power density at high switching frequencies
- Higher system reliability
- Reduced EMI
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