数据手册- V(CE)
- 650 V
- I(C)
- 80 A
- V(CEsat)
- 1.65 V
- 封装
- TO263-3
- Q(g)
- NO
- P(tot)
- 270 W
- P(tot)
- NO
- t(r)
- 31 nS
- td(off)
- 173 nS
- td(开)
- 23 nS
- 安装
- SMD
- RoHS Status
- RoHS-conform
- 技术
- TRENCHST.5
- 包装
- REEL
- 生产商产品料号
- SP001509614
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- Malaysia
- ABC 编码
- A
- 生产商交期
- 21 周
Description:
Summary of Features
- 650 V breakthrough voltage
- Compared to Infineon’s High Speed 3 family
- Factor 2.5 lower Qg
- Factor 2 reduction in switching losses
- 200mV reduction in VCEsat
- Co-packed with Infineon’s new Rapid Si-diode technology
- Low COES/EOSS
- Mild positive temperature coefficient VCEsat
- Temperature stability of Vf
Benefits
- Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
- 50V increase in the bus voltage possible without compromising reliability
- Higher power density design
Target Applications
- battery-charger |delimiter|
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