IGB50N65S5ATMA1
图片仅供参考
Description:
IGBT 650V 50A 1.35V TO263-3
生产商:
INFINEON
产品描述代码:
IGB50N65S5
Rutronik No.:
IGBT2472
包装单位:
1000
最低订购量:
1000
封装:
TO263-3
包装:
REEL
数据手册- V(CE)
- 650 V
- I(C)
- 80 A
- V(CEsat)
- 1.35 V
- 封装
- TO263-3
- Q(g)
- NO
- P(tot)
- 270 W
- P(tot)
- NO
- t(r)
- 30 nS
- td(off)
- 139 nS
- td(开)
- 20 nS
- 安装
- SMD
- RoHS Status
- RoHS-conform
- 技术
- TRENCHST.5
- 包装
- REEL
- 生产商产品料号
- SP001502566
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- Malaysia
- ABC 编码
- A
- 生产商交期
- 21 周
Description:
Summary of Features
- Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5
- I C(n)=four times nominal current (100°C Tc)
- Soft current fall characteristics with no tail current
- Symmetrical, low voltage overshoot
- Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
- Maximum junction temperature Tvj=175°C
- Qualified according to JEDEC standards
Benefits
- VCE(peak) clamping circuits not required
- Suitable for use with single turn-on / turn-off gate resistor
- No need for gate clamping components
- Gate drivers with Miller clamping not required
- Reduction in the EMI filtering needed
- Excellent for paralleling
Target Applications
- battery-charger |delimiter|
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