IGW15N120H3FKSA1

Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.

Summary of Features

• Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
• Low switching losses for high efficiency
• Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
• Fast switching behavior with low EMI emissions
• Optimized diode for target applications, meaning further improvement in switching losses
• Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
• Short circuit capability
• Offering T j(max) of 175°C
• Packaged with and without freewheeling diode for increased design freedom

Benefits

• Excellent cost/performance
• Low switching and conduction losses
• Very good EMI behavior
• A small gate resistor for reduced delay time and voltage overshoot
• Smaller die sizes -> smaller packages
• Best-in-class IGBT efficiency and EMI behavior

Target Applications

• Welding inverters
• Solar inverters
• UPS
• All hard switching applications