- V(CE)
- 1200 V
- I(C)
- 30 A
- V(CEsat)
- 2.2 V
- 封装
- TO247-3
- Q(g)
- NO
- P(tot)
- 110 W
- P(tot)
- NO
- t(r)
- 35 nS
- td(off)
- 600 nS
- td(开)
- 50 nS
- 安装
- THT
- RoHS Status
- RoHS-conform
- 技术
- 2-20kHz
- 包装
- TUBE
- 生产商产品料号
- SP000013888
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- China
- ABC 编码
- A
- 生产商交期
- 62 周
Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Summary of Features
- Lowest V ce(sat) drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
- Very soft, fast recovery anti-parallel Emitter Controlled HE diode
- High ruggedness, temperature stable behavior
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
Benefits
- Highest efficiency – low conduction and switching losses
- Comprehensive portfolio in 600V and 1200V for flexibility of design
- High device reliability
Target Applications
- UPS
- Solar inverters
- Motor control
- Major home appliances
- Welding
- Other hard switching applications
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