IGW25N120H3FKSA1

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Description: IGBT 1200V 50A 2.05V TO247-3 生产商: INFINEON 产品描述代码: IGW25N120H3 Rutronik No.: IGBT1162 包装单位: 30 最低订购量: 30 封装: TO247-3 包装: TUBE

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参数

V(CE): 1200 V
I(C): 50 A
V(CEsat): 2.40 V
封装: TO247-3
Q(g): NO
P(tot): 326 W
P(tot): NO
t(r): 41 nS
td(off): 277 nS
td(开): 27 nS
安装: THT
RoHS Status: RoHS-conform
技术: HighSpeed
包装: TUBE

生产商产品料号: SP000674424
出口控制分类编号: EAR99
海关税号: 85412900000
国家或地区: China
ABC 编码: A
生产商交期: 21 周

描述

Description:

High speed 1200 V, 25 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

Summary of Features:

Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70 kHz
Low switching losses for high efficiency
Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology
Fast switching behavior with low EMI emissions
Optimized diode for target applications, meaning further improvement in switching losses
Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
Short circuit capability
Offering Tj(max) of 175°C
Packaged with and without freewheeling diode for increased design freedom

Benefits:

Low switching and conduction losses
Very good EMI behavior
Can be used with a small gate resistor for reduced delay time and voltage overshoot
High current density
Best-in-class 1200 V IGBT efficiency and EMI behavior

Target Applications:

- Industrial heating and welding

- solar

- power supply