数据手册- V(CE)
- 600 V
- I(C)
- 80 A
- V(CEsat)
- 1.95 V
- 封装
- TO247-3
- Q(g)
- NO
- P(tot)
- 306 W
- P(tot)
- NO
- t(r)
- 33 nS
- td(off)
- 197 nS
- td(开)
- 19 nS
- 安装
- THT
- RoHS Status
- RoHS-conform
- 技术
- TrenchStop
- 包装
- TUBE
- 生产商产品料号
- SP000769926
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- China
- ABC 编码
- A
- 生产商交期
- 21 周
Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
Summary of Features
- Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
- Low switching losses for high efficiency
- Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
- Fast switching behavior with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short circuit capability
- Offering T j(max) of 175°C
- Packaged with and without freewheeling diode for increased design freedom
Benefits
- Excellent cost/performance
- Low switching and conduction losses
- Very good EMI behavior
- A small gate resistor for reduced delay time and voltage overshoot
- Smaller die sizes -> smaller packages
- Best-in-class IGBT efficiency and EMI behavior
Target Applications
- Welding Inverters
- Solar Inverters
- UPS
- All hard switching applications
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