IGZ75N65H5XKSA1
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图片仅供参考
Description:
IGBT 650V 75A 1,65V TO247-3
生产商:
INFINEON
产品描述代码:
IGZ75N65H5
Rutronik No.:
IGBT2273
包装单位:
240
最低订购量:
240
封装:
TO-247
包装:
TUBE
- V(CE)
- 650 V
- I(C)
- 75 A
- V(CEsat)
- 1,65 V
- 封装
- TO-247
- Q(g)
- YES
- P(tot)
- 197 W
- P(tot)
- NO
- t(r)
- 11 nS
- td(off)
- 347 nS
- td(开)
- 26 nS
- 安装
- THT
- RoHS Status
- RoHS-conform
- 技术
- Trench
- 包装
- TUBE
- 生产商产品料号
- SP001160054
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- China
- ABC 编码
- A
- 生产商交期
- 21 周
To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration.
Summary of Features
- Extremely low control inductance loop
- Emitter pin for driver feedback
- Same creepage distance of collector emitter as standard TO-247 package
- 20% reduction in total switching losses compared to TO-247 package using same technology
Benefits
- System efficiency improvement compared to standard TO-247
- Benefit increase at high current conditions
- IGBTs operates under lower junction temperature
- Much less power dissipation under overcurrent conditions
Target Applications
- Uninterruptible power supply
- Datacenters
- Telecom Rectifiers
- Photovoltaic Inverters
- Server
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