数据手册- V(CE)
- 1200 V
- I(C)
- 30 A
- V(CEsat)
- 1.7 V
- 封装
- TO247-3
- Q(g)
- YES
- P(tot)
- 254 W
- P(tot)
- NO
- t(r)
- 46 nS
- td(off)
- 300 nS
- 安装
- THT
- RoHS Status
- RoHS-conform
- 技术
- IH-series
- 包装
- TUBE
- 生产商产品料号
- SP000521590
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- China
- ABC 编码
- C
- 生产商交期
- 21 周
The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs.
Summary of Features
- Best-in-class conduction properties in VCEsat and Vf
- Lowest switching losses, highest efficiency
- Tj(max) = 175°C
- Soft current turn-off waveforms for low EMI
Benefits
- Lowest power dissipation
- Better thermal management
- Surge current capability
- Lower EMI filtering requirements
- Reduced system costs
- Excellent quality
- Highest reliability against peak currents
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