IHW50N65R6XKSA1

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Description: IGBT 650V 50A 1.3V TO247-3 生产商: INFINEON 产品描述代码: IHW50N65R6 Rutronik No.: IGBT2976 包装单位: 30 最低订购量: 240 封装: TO247-3 包装: TUBE

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参数

V(CE): 650 V
I(C): 100 A
V(CEsat): 1.3 V
封装: TO247-3
Q(g): YES
P(tot): 251 W
P(tot): NO
t(r): 25 nS
td(off): 261 nS
td(开): 21 nS
安装: THT
RoHS Status: RoHS-conform
技术: RC-Soft-Sw
包装: TUBE

生产商产品料号: SP005399490
出口控制分类编号: EAR99
海关税号: 85412900000
国家或地区: China
ABC 编码: B
生产商交期: 21 周

描述

650 V, 50 A IGBT with monolithically integrated diode in TO-247 package

Reverse Conducting R6 650 V, 50 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using half-bridge resonant topology.

Thanks to best system performances and high compatibility with existing gate driver solution, 650 V R6 IGBT represents the optimal choice for soft switching topologies.

Summary of Features

Very low VCEsat and low Eoff
High ruggedness and stable temperature behavior
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Frequency range 20-75 kHz
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C

Benefits