- V(CE)
- 600 V
- I(C)
- 20 A
- V(CEsat)
- 1.5 V
- 封装
- D2PAK
- Q(g)
- YES
- P(tot)
- 166 W
- P(tot)
- NO
- t(r)
- 14 nS
- td(off)
- 199 nS
- td(开)
- 18 nS
- 安装
- SMD
- RoHS Status
- RoHS-conform
- 技术
- IGBT
- 包装
- REEL
- 生产商产品料号
- SP000054883
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- Malaysia
- ABC 编码
- B
- 生产商交期
- 21 周
Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Summary of Features
- Lowest V ce(sat) drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
- Very soft, fast recovery anti-parallel Emitter Controlled Diode
- High ruggedness, temperature stable behavior
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
Benefits
- Highest efficiency – low conduction and switching losses
- Comprehensive portfolio in 600V and 1200V for flexibility of design
- High device reliability
Target Applications
- UPS
- Solar Inverters
- Major Home Appliances
- Welding
- Air conditioning
- Industrial Drives
- Other hard switching applications
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