IKD08N65ET6ARMA1
图片仅供参考
Description:
IGBT 650V 8A DPAK TO-252-3
生产商:
INFINEON
产品描述代码:
IKD08N65ET6
Rutronik No.:
IGBT2931
包装单位:
3000
最低订购量:
3000
封装:
TO252-3
包装:
REEL
数据手册- V(CE)
- 650 V
- I(C)
- 8 A
- V(CEsat)
- 1.5 V
- 封装
- TO252-3
- Q(g)
- YES
- P(tot)
- 47 W
- P(tot)
- NO
- t(r)
- 12 nS
- td(off)
- 59 nS
- td(开)
- 20 nS
- 安装
- SMD
- RoHS Status
- RoHS-conform
- 技术
- TRENCHST.6
- 包装
- REEL
- 生产商产品料号
- SP004275470
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- China
- ABC 编码
- C
- 生产商交期
- 100 周
650 V, 8 A IGBT with anti-parallel diode in TO-252-3 package
Hard-switching 650 V, 8 A TRENCHSTOP™ IGBT6 discrete in TO-252-3 package. This price optimized range has premium controllability for a best cost efficient solution.
Summary of Features
- Very low VCEsat
- Maximum junction temperature 175 °C
- Short circuit withstand time 3 µ at 400 V Vcc , TC = 150 ℃
- Low gate charge QG
- Pb-free lead plating; RoHS compliant
Trench and field-stop technology for 650 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCEsat and positive temperature coefficient
- Motor control and drives
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