IKFW75N65ES5XKSA1

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Description: IGBT 650V 75A 1,35V HSIP247-3 生产商: INFINEON 产品描述代码: IKFW75N65ES5 Rutronik No.: IGBT2898 包装单位: 30 最低订购量: 240 封装: HSIP247-3 包装: TUBE

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参数

V(CE): 650 V
I(C): 80 A
V(CEsat): 1.35 V
封装: HSIP247-3
Q(g): YES
P(tot): 148 W
P(tot): NO
t(r): 32 nS
td(off): 152 nS
td(开): 24 nS
安装: THT
RoHS Status: RoHS-conform
技术: TRENCHSTOP
包装: TUBE

生产商产品料号: SP001728806
出口控制分类编号: EAR99
海关税号: 85412900000
国家或地区: Malaysia
生产商交期: 21 周

描述

650 V, 75 A IGBT in TO-247 advanced isolation package

Hard-switching 650 V, 75 A TRENCHSTOP™ 5 S5 IGBT discrete in TO-247 advanced isolation package addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but easy design-in, faster time-to-market cycles and simplification of circuit design.

This package eliminates the need of isolation material and enables high power density, the best thermal performance and the lowest cooling effort thanks to an effective and reliable thermal path from the IGBT die to the heatsink.

Summary of Features

Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 S5
4 times Ic pulse current (100°C Tc)
Soft current fall characteristics with no tail current
Symmetrical, low voltage overshoot
Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
2500 VRMS electrical isolation, 50/60 Hz, t = 1 min
100 % tested isolated mounting surface
Pb-free lead plating; RoHS compliant
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22

Benefits