- V(CE)
- 650 V
- I(C)
- 40 A
- V(CEsat)
- 1.65 V
- 封装
- TO220-3
- Q(g)
- YES
- P(tot)
- 255 W
- P(tot)
- NO
- t(r)
- 12 nS
- td(off)
- 165 nS
- td(开)
- 22 nS
- 安装
- THT
- RoHS Status
- RoHS-conform
- 技术
- Tren.Stop5
- 包装
- TUBE
- 生产商产品料号
- SP001001720
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- China
- ABC 编码
- A
- 生产商交期
- 21 周
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.
Summary of Features
- 650V breakthrough voltage
- Compared to Infineon’s best-in-class HighSpeed 3 family
- Factor 2.5 lower Q g
- Factor 2 reduction in switching losses
- 200mV reduction in V CE(sat)
- Co-packed with Infineon’s new Rapid Si-diode technology
- Low C OES/E OSS
- Mild positive temperature coefficient V CE(sat)
- Temperature stability of V f
Benefits
- Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
- 50V increase in the bus voltage possible without compromising reliability
- Higher power density design
Target Applications
- Uninterruptible Power Supplies
- Welding
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