数据手册- V(CE)
- 1200 V
- I(C)
- 75 A
- V(CEsat)
- 2 V
- 封装
- TO-247
- Q(g)
- YES
- P(tot)
- 256 W
- P(tot)
- NO
- t(r)
- 47 nS
- td(off)
- 388 nS
- td(开)
- 33 nS
- 安装
- THT
- RoHS Status
- RoHS-conform
- 技术
- Trench
- 包装
- TUBE
- 生产商产品料号
- SP001220142
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- China
- ABC 编码
- A
- 生产商交期
- 21 周
Description:
Summary of Features
- High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
- 20% lower R th(jh) compared to TO-247 3 pin
- Extended collector-emitter pin creepage of 4.25 mm
- Extended clip creepage due to fully encapsulated front side of the package
Benefits
- Higher system power density – I c increase keeping the same system thermal performance
- Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247
- Higher reliability, extended lifetime of the device
Target Applications
- Uninterruptable power suppliers (UPS)
- Battery Charger
- Energy storage
- Portable welding converter
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