IKW25N120H3FKSA1

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Description: IGBT 1200V 50A 2.40V TO247-3 生产商: INFINEON 产品描述代码: IKW25N120H3 Rutronik No.: IGBT1165 包装单位: 30 最低订购量: 30 封装: TO247-3 包装: TUBE

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参数

V(CE): 1200 V
I(C): 50 A
V(CEsat): 2.40 V
封装: TO247-3
Q(g): YES
P(tot): 326 W
P(tot): NO
t(r): 41 nS
td(off): 277 nS
td(开): 27 nS
安装: THT
RoHS Status: RoHS-conform
技术: HighSpeed
包装: TUBE

生产商产品料号: SP000674418
出口控制分类编号: EAR99
海关税号: 85412900000
国家或地区: China
ABC 编码: A
生产商交期: 21 周

描述

1200 V IGBT with anti-parallel diode in TO-247 package

High speed 1200 V, 25 A hard-switching TRENCHSTOP™ IGBT4 co-packed with free-wheeling diode in a TO-247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

Summary of Features
- Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
- Low switching losses for high efficiency
- Excellent Vce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
- Fast switching behavior with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short circuit capability 5µs
- Offering Tj(max) of 175°C
- Packaged with and without freewheeling diode for increased design freed

Benefits
- Low switching and conduction losses
- Very good EMI behavior
- Can be used with a small gate resistor for reduced delay time and voltage overshoot
- High current density
- Best-in-class 1200 V IGBT efficiency and EMI behavior

Potential Applications
- Industrial Heating and Welding
- Solutions for solar energy systems
- Uninterruptible power supply (UPS)