IKW25N120T2FKSA1

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Description: IGBT 1200V 25A 1,7V TO247-3 生产商: INFINEON 产品描述代码: IKW25N120T2 Rutronik No.: IGBT2109 包装单位: 30 最低订购量: 30 封装: TO247-3 包装: TUBE

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参数

V(CE): 1200 V
I(C): 25 A
V(CEsat): 1.7 V
封装: TO247-3
Q(g): YES
P(tot): 349 W
P(tot): NO
t(r): 20 nS
td(off): 265 nS
td(开): 27 nS
安装: THT
RoHS Status: RoHS-conform
技术: IGBT
包装: TUBE

生产商产品料号: SP000244960
出口控制分类编号: EAR99
海关税号: 85412900000
国家或地区: China
ABC 编码: A
生产商交期: 21 周

描述

Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Summary of Features

Lowest V ce(sat) drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution