数据手册- V(CE)
- 1200 V
- I(C)
- 40 A
- V(CEsat)
- 1.85 V
- 封装
- TO247-3
- Q(g)
- YES
- P(tot)
- 500 W
- P(tot)
- NO
- t(r)
- 39 nS
- td(off)
- 315 nS
- td(开)
- 27 nS
- 安装
- THT
- RoHS Status
- RoHS-conform
- 技术
- IGBT6
- 包装
- TUBE
- 生产商产品料号
- SP001666622
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- China
- ABC 编码
- A
- 生产商交期
- 21 周
Description:
Summary of Features
- High efficiency in hard switching and resonant topologies
- Low saturation voltage if 1.85 V combined with low switching losses
- Easy paralleling capability due to positive temperature coefficient in VCEsat
- Low EMI
- Low Gate Charge QG
- Very soft, fast recovery anti-parallel diode
- High ruggedness, temperature stable behaviour
- Very tight parameter distribution
Benefits
- Lowest losses on IGBT, high system efficiency for higher power output
- Fast and easy replacement of predecessor H3 technology
- High device reliability and lifetime expectancy
Target Applications
- battery-charger
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