IKW40N120H3FKSA1

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Description: IGBT 1200V 80A 2.05V TO247-3 生产商: INFINEON 产品描述代码: IKW40N120H3 Rutronik No.: IGBT1159 包装单位: 30 最低订购量: 240 封装: TO247-3 包装: TUBE

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参数

V(CE): 1200 V
I(C): 80 A
V(CEsat): 2.40 V
封装: TO247-3
Q(g): YES
P(tot): 483 W
P(tot): NO
t(r): 57 nS
td(off): 290 nS
td(开): 30 nS
安装: THT
RoHS Status: RoHS-conform
技术: HighSpeed
包装: TUBE

生产商产品料号: SP000674416
出口控制分类编号: EAR99
海关税号: 85412900000
国家或地区: China
ABC 编码: A
生产商交期: 21 周

描述

Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.

Summary of Features

Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
Low switching losses for high efficiency
Excellent V CEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology
Fast switching behavior with low EMI emissions
Optimized diode for target applications, meaning further improvement in switching losses
Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
Short circuit capability
Offering T j(max) of 175°C
Packaged with and without freewheeling diode for increased design freedom