数据手册- V(CE)
- 650 V
- I(C)
- 75 A
- V(CEsat)
- 1.65 V
- 封装
- TO-247-3
- Q(g)
- YES
- P(tot)
- 198 W
- P(tot)
- NO
- t(r)
- 33 nS
- td(off)
- 174 nS
- td(开)
- 28 nS
- 安装
- THT
- RoHS Status
- RoHS-conform
- 技术
- Trench
- 包装
- TUBE
- 生产商产品料号
- SP001257948
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- China
- ABC 编码
- A
- 生产商交期
- 21 周
High Speed 650 V, hard-switching IGBT TRENCHSTOP™ 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT.
Summary of Features
- 650 V breakthrough voltage
- Compared to best-in-class HighSpeed 3 family
- Factor 2.5 lower Qg
- Factor 2 reduction in switching losses
- 200mV reduction in VCEsat
- Co-packed with Rapid Si-diode technology
- Low COES/EOSS
- Mild positive temperature coefficient VCEsat
- Temperature stability of Vf
Benefits
- Best-in-class efficiency, resulting in lower junction and
- case temperature leading to higher device reliability
- 50 V increase in the bus voltage possible without compromising
- reliability
- Higher power density design
Target Applications
- Uninterruptible power supply (UPS) system
- Industrial heating and welding
您可给我们发订单订购购物车内产品，如有疑问，也可向我们进行无约束力的询价。
Rutronik24电子商务平台仅适用于企业和组织客户。
