IKW75N65EL5XKSA1

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Description: IGBT 650V 75A 1,1V TO247-3 生产商: INFINEON 产品描述代码: IKW75N65EL5 Rutronik No.: IGBT2016 包装单位: 30 最低订购量: 240 封装: TO247-3 包装: TUBE

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参数

V(CE): 650 V
I(C): 75 A
V(CEsat): 1.1 V
封装: TO247-3
Q(g): YES
P(tot): 268 W
P(tot): NO
t(r): 50 nS
td(off): 275 nS
td(开): 40 nS
安装: THT
RoHS Status: RoHS-conform
技术: fast
包装: TUBE

生产商产品料号: SP001174464
出口控制分类编号: EAR99
海关税号: 85412900000
国家或地区: China
生产商交期: 21 周

描述

Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.10V for 75A IGBT.

Summary of Features

Lowest saturation voltage V CE(sat) of only 1.05V
Low switching losses of 1.6mJ @ 25°C for 30A IGBT
High thermal stability of electrical parameters - only 2% drift with T j increase from 25°C to 175°C
Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package