数据手册- V(CE)
- 1200 V
- I(C)
- 75 A
- V(CEsat)
- 1.85 V
- 封装
- TO247-3-46
- Q(g)
- YES
- P(tot)
- 880 W
- P(tot)
- NO
- t(r)
- 44 nS
- td(off)
- 300 nS
- td(开)
- 34 nS
- 安装
- THT
- RoHS Status
- RoHS-conform
- 技术
- IGBT6
- 包装
- TUBE
- 生产商产品料号
- SP001666626
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- China
- ABC 编码
- B
- 生产商交期
- 21 周
Description:
Summary of Features
- High efficiency in hard switching and resonant topologies
- Low saturation voltage if 1.85 V combined with low switching losses
- Easy paralleling capability due to positive temperature coefficient in VCEsat
- Low EMI
- Low Gate Charge QG
- Very soft, fast recovery anti-parallel diode
- High ruggedness, temperature stable behaviour
- Very tight parameter distribution
- High power density and low thermal resistance of the TO-247PLUS package
Benefits
- Lowest losses on IGBT, high system efficiency for higher power output
- Fast and easy replacement of predecessor H3 technology
- High device reliability and lifetime expectancy
- Highest current of 75 A 1200 V IGBT with 75 A diode in TO-247 footprint
- Lower thermal resistance Rth(jh) of the TO-247PLUS benefits to ~15% better heat dissipation and extended lifetime expectancy of IGBT
- Kelvin emitter pin brings reduction of total switching losses
Target Applications
- battery-charger
您可给我们发订单订购购物车内产品，如有疑问，也可向我们进行无约束力的询价。
Rutronik24电子商务平台仅适用于企业和组织客户。
