- V(CE)
- 1200 V
- I(C)
- 40 A
- V(CEsat)
- 1.7 V
- 封装
- TO247-3
- Q(g)
- NO
- P(tot)
- 330 W
- P(tot)
- NO
- t(r)
- 13 nS
- td(off)
- 360 nS
- td(开)
- 34 nS
- 安装
- SMD
- RoHS Status
- RoHS-conform
- 技术
- TRENCHSTOP
- 包装
- TUBE
- 生产商产品料号
- SP005578267
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- China
- 生产商交期
- 21 周
1200 V, 40 A IGBT with anti-parallel diode in TO-247 4pin package
Applications
Hard-switching 1200 V, 40 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247 4pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
Summary of Features
- Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology
- Fast switching behavior with low EMI emissions
- Optimized diode for target applications, resulting in low Qrr
- Low gate resistor selection possible (down to 5 Ω) whilst maintaining excellent switching behavior
- Offering Tj(max) of 175 °C
Benefits
- Technology with the highest power density with up to 140 A rating
- Optimized performance in application conditions
- Lowest conduction losses
- Lowest switching losses
- Humidity robustness under harsh environment
- Improved EMI performance
- Kelvin emitter pin brings additional reduction of total switching losses compare to 3 pin
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