数据手册- V(CE)
- 650 V
- I(C)
- 80 A
- V(CEsat)
- 1.35 V
- 封装
- TO247-4
- Q(g)
- YES
- P(tot)
- 395 W
- P(tot)
- NO
- t(r)
- 20 nS
- td(off)
- 145 nS
- td(开)
- 22 nS
- 安装
- THT
- RoHS Status
- RoHS-conform
- 技术
- IGBT5
- 包装
- TUBE
- 生产商产品料号
- SP004038220
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- China
- ABC 编码
- A
- 生产商交期
- 22 周
650 V, 75 A IGBT Discrete with CoolSiC™ diode
650 V, 75A TRENCHSTOP™ 5 S5 IGBT co-packed with full-rated 6th generation CoolSiC™ Schottky barrier diode in Kelvin-emitter TO-247-4 package.
The 650 V hard-switching TRENCHSTOP™ 5 S5 IGBT technology addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but is easy to design-in.
Combination of the TRENCHSTOP™ 5 S5 IGBT technology with the freewheeling SiC Schottky barrier diodes further reduces switching losses at almost unchanged dv/dt and di/dt values.
The Kelvin emitter TO-247 4pin package provides ultra-low inductance to the gate-emitter control loop further improving switching performance especially at high switching frequencies.
Summary of Features
- Ultra-low switching losses due to the combination of TRENCHSTOP™ 5 and CoolSiC™ diode technology as well as the Kelvin emitter package
- Very low on-state losses
- Benchmark switching efficiency in hard switching topologies
- Simplified PCB design due to the optimized pin-out of the four-pin package
- Qualified according to JEDEC for target applications
- Pb-free lead plating; RoHS compliant
- Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Benefits
- Highest efficiency
- Reduced cooling effort
- Increased power density
- Plug & play replacement of the pure silicon devices
- Easy upgrade of existing designs for higher efficiency
- Excellent for paralleling
- Power Management (SMPS) - Reference Design
- Solutions for solar energy systems
- Uninterruptible Power Supply (UPS)
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