数据手册- Configuration
- N-CH
- V(DS)
- 700 V
- I(D)at Tc=25°C
- 12,5 A
- RDS(on)at 10V
- 300 mOhm
- Q(g)
- 16,4 nC
- P(tot)
- 26,5 W
- R(thJC)
- 4,7 K/W
- Logic level
- NO
- Mounting
- THT
- Technology
- CoolMOS
- Fast bodydiode
- YES
- P(tot)
- NO
- 封装
- TO-220FP
- RoHS Status
- RoHS-conform
- 包装
- TUBE
- 生产商产品料号
- SP001499698
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- China
- ABC 编码
- B
- 生产商交期
- 19 周
Description:
Summary of Features
- Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off
- Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior
- Allowing high speed switching
- Integrated protection Zener diode
- Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
- Finely graduated portfolio
Benefits
- Cost competitive technology
- Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology
- Further efficiency gain at higher switching speed
- Supporting less magnetic size with lower BOM costs
- High ESD ruggedness up to HBM Class 2 level
- Easy to drive and design-in
- Enabler for smaller form factors and high power density designs
- Excellent choice in selecting the best fitting product
Target Applications
- Charger
- Adapter
- TV
- Lighting
- Audio
- Aux power
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