- Configuration
- N-CH
- V(DS)
- 700 V
- I(D)at Tc=25°C
- 107 A
- RDS(on)at 10V
- 80 mOhm
- Q(g)
- 50 nC
- P(tot)
- 223 W
- R(thJC)
- 0.56 K/W
- Logic level
- No
- Mounting
- SMD
- P(tot)
- NO
- 封装
- HDSOP-22
- RoHS Status
- RoHS-conform
- 包装
- REEL
- 生产商产品料号
- SP005537603
- 海关税号
- 85412900000
- 国家或地区
- Malaysia
- 生产商交期
- 22 周
Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R080CFD7 in a QDPAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.
Summary of Features
- Ultrafast body diode and very low Qrr
- 650 V breakdown voltage
- Significantly reduced switching losses compared to competition
- Lowest RDS(on) dependency over temperature
Benefits
- Excellent hard-commutation ruggedness
- Extra safety margin for designs with increased bus voltage
- Enabling increased power density
- Outstanding light-load efficiency in industrial SMPS applications
- Improved full-load efficiency in industrial SMPS applications
- Price competitiveness compared to alternative offerings in the market
Potential Applications
您可给我们发订单订购购物车内产品,如有疑问,也可向我们进行无约束力的询价。
Rutronik24电子商务平台仅适用于企业和组织客户。