数据手册- Configuration
- N-CH
- V(DS)
- 250 V
- I(D)at Tc=25°C
- 61 A
- RDS(on)at 10V
- 2,2 mOhm
- Q(g)
- 65 nC
- P(tot)
- 300 W
- R(thJC)
- 0,3 K/W
- Logic level
- NO
- Mounting
- THT
- Technology
- OptiMOS 3
- Fast bodydiode
- NO
- P(tot)
- AEC-Q(101)
- 封装
- TO-220
- RoHS Status
- RoHS-conform
- 包装
- TUBE
- 生产商产品料号
- SP001108126
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- Malaysia
- ABC 编码
- A
- 生产商交期
- 18 周
New OptiMOS™ Fast Diode (FD), Infineon’s latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter.
Summary of Features
- Improved hard commutation ruggedness
- Optimized hard switching behavior
- Industry’s lowest R ds(on), Q g and Q rr
- RoHS compliant - halogen free
Benefits
- Highest system reliability
- System cost reduction
- Highest efficiency and power density
- Easy-to-design products
Target Applications
- Telecom
- Class D audio amplifier
- Motor control for 48-110V systems
- Industrial power supplies
- DC-AC inverter
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