数据手册- Configuration
- N-CH
- V(DS)
- 650 V
- I(D)at Tc=25°C
- 42 A
- RDS(on)at 10V
- 210 mOhm
- Q(g)
- 23 nC
- P(tot)
- 64 W
- R(thJC)
- 1.94 K/W
- Logic level
- NO
- Mounting
- THT
- Technology
- CoolMOS
- Fast bodydiode
- YES
- P(tot)
- NO
- 封装
- TO-220
- RoHS Status
- RoHS-conform
- 包装
- TUBE
- 生产商产品料号
- SP001715660
- 出口控制分类编号
- EAR99
- 海关税号
- 85412900000
- 国家或地区
- China
- ABC 编码
- A
- 生产商交期
- 22 周
Description:
Summary of Features
- Ultra-fast body diode
- Best-in-class reverse recovery charge (Qrr)
- Improved reverse diode dv/dt and dif/dt ruggedness
- Lowest FOM RDS(on) x Qg and Eoss
- Best-in-class RDS(on)/package combinations
Benefits
- Best-in-class hard commutation ruggedness
- Highest reliability for resonant topologies
- Highest efficiency with outstanding ease-of-use/performance trade-off
- Enabling increased power density solutions
Target Applications
- Target Applications:
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